NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACTURING THEREOF

摘要

A nitride semiconductor light-emitting element is provided with a nitride semiconductor multilayer structure (20) comprising a p-type semiconductor area (25) the growth face (12) of which is an m-face, and an electrode (30) formed on an AldGaeN layer (25). The AldGaeN layer (25) is formed of a GaN type semiconductor, and the electrode (30) contains Ag as the main ingredient thereof and also contains Mg and/or Zn, and Ge.