| 摘要 |
<p>A method of forming an ohmic contact on a substrate is described. The method includes depositing a set of silicon particles on the substrate surface. The method also includes heating the substrate in a baking ambient to a baking temperature and for a baking time period in order to create a densified film ink pattern. The method further includes exposing the substrate to a dopant source in a diffusion furnace with a deposition ambient, the deposition ambient comprising POCl3, a carrier N2 gas, a main N2 gas, and a reactive O2 gas at a deposition temperature and for a deposition time period, wherein a PSG layer is formed on the substrate surface. The method also includes heating the substrate in a drive-in ambient to a drive-in temperature and for a drive-in time period; and depositing a silicon nitride layer. The method further includes depositing a set of metal contacts on the set of silicon particles; and heating the substrate to a firing temperature and for a firing time period.</p> |
