发明名称 |
Sub-module and power semiconductor module |
摘要 |
<p>The submodule (22b) has a strip conductor (24) located on a part of a carrier (6), and an integrated semiconductor structure (26) applied on the conductor. The structure is connected with the conductor via flat contacts. A switched integrated ohmic resistor is integrated between two terminals (28a, 28b). A switched integrated dual diode structure is arranged between a terminal (28c) and one of the former terminals. The diode structure extends from a bottom face as a vertical structure towards an upper face, where the bottom face turns towards the semiconductor structure. An independent claim is also included for a power semiconductor module comprising a control input.</p> |
申请公布号 |
EP2413354(B1) |
申请公布日期 |
2013.01.09 |
申请号 |
EP20110172453 |
申请日期 |
2011.07.04 |
申请人 |
SEMIKRON ELEKTRONIK GMBH & CO. KG |
发明人 |
BERBERICH, SVEN;WINTRICH, ARENDT |
分类号 |
H01L23/62;H01L25/07 |
主分类号 |
H01L23/62 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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