发明名称 THIN FILM FORMING APPARATUS
摘要 <p>The thin-film forming apparatus includes: a deposition vessel that includes a deposition space in which the thin film is formed on the substrate in a reduced-pressure state; a raw material gas introducing section configured to introduce a raw material gas for the thin-film into the deposition space of the deposition vessel; and a plasma electrode section configured to generate plasma using the raw material gas for the thin-film in the deposition space. The plasma electrode section is a plate member in which a current flows from one end surface to the other end surface, the plate member provided with, as a plasma generating electrode, an electrode plate including an outward portion and a return portion which allow the current to flow in parallel to each other by bending a direction of the current flowing through the plate member in mid-flow.</p>
申请公布号 EP2544223(A1) 申请公布日期 2013.01.09
申请号 EP20110750333 申请日期 2011.02.21
申请人 MITSUI ENGINEERING & SHIPBUILDING CO., LTD. 发明人 TAKIZAWA, KAZUKI;MIYATAKE, NAOMASA;MURATA, KAZUTOSHI
分类号 H01L21/205;C23C16/509;H01J37/32;H05H1/46 主分类号 H01L21/205
代理机构 代理人
主权项
地址