发明名称 |
THIN FILM FORMING APPARATUS |
摘要 |
<p>The thin-film forming apparatus includes: a deposition vessel that includes a deposition space in which the thin film is formed on the substrate in a reduced-pressure state; a raw material gas introducing section configured to introduce a raw material gas for the thin-film into the deposition space of the deposition vessel; and a plasma electrode section configured to generate plasma using the raw material gas for the thin-film in the deposition space. The plasma electrode section is a plate member in which a current flows from one end surface to the other end surface, the plate member provided with, as a plasma generating electrode, an electrode plate including an outward portion and a return portion which allow the current to flow in parallel to each other by bending a direction of the current flowing through the plate member in mid-flow.</p> |
申请公布号 |
EP2544223(A1) |
申请公布日期 |
2013.01.09 |
申请号 |
EP20110750333 |
申请日期 |
2011.02.21 |
申请人 |
MITSUI ENGINEERING & SHIPBUILDING CO., LTD. |
发明人 |
TAKIZAWA, KAZUKI;MIYATAKE, NAOMASA;MURATA, KAZUTOSHI |
分类号 |
H01L21/205;C23C16/509;H01J37/32;H05H1/46 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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