发明名称 |
Methods for high-rate sputtering of a compound semiconductor on large area substrates |
摘要 |
<p>Methods are generally provided for sputtering thin films on individual substrates 12. Individual substrates 12 can be conveyed into a vacuum chamber to draw a sputtering pressure that is less than about 50 mTorr. Then, the individual substrates 12 can be conveyed into a sputtering chamber 166 and past a planar magnetron continuously sputtering a target 170 by an ionized gas at the sputtering pressure such that a thin film is formed on a surface of the individual substrate. The target 170 is subjected to a high frequency power having a frequency from about 400 kHz to about 4 MHz at power levels of greater than about 1 kW. In one particular embodiment, the method can be generally directed to sputtering thin films on individual substrates 12 defining a surface having a surface area of about 1000 cm 2 to about 2500 cm 2 .</p> |
申请公布号 |
EP2381010(B1) |
申请公布日期 |
2013.01.09 |
申请号 |
EP20110163134 |
申请日期 |
2011.04.20 |
申请人 |
PRIMESTAR SOLAR, INC |
发明人 |
HALLORAN, SEAN TIMOTHY;GOSSMAN, ROBERT DWAYNE;BLACK, RUSSELL WELDON |
分类号 |
C23C14/06;C23C14/35;C23C14/56;H01L31/18 |
主分类号 |
C23C14/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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