发明名称 |
STRUCTURES AND METHODS OF FABRICATING DUAL GATE DEVICES |
摘要 |
First polysilicon (poly-1) is deposited into deep trenches that have been formed in a substrate. A first polysilicon polishing process is performed to planarize the exposed surfaces of the poly-1 so that the surfaces are flush with adjacent surfaces. Then, shallow trenches are formed in the substrate between the deep trenches, and second polysilicon (poly-2) is deposited into the shallow trenches. A second polysilicon polishing process is performed to planarize the exposed surface of the poly-2 so that the surface is flush with adjacent surfaces. Metal contacts to the poly-1 and the poly-2 are then formed. |
申请公布号 |
EP2543072(A2) |
申请公布日期 |
2013.01.09 |
申请号 |
EP20110751320 |
申请日期 |
2011.03.02 |
申请人 |
VISHAY-SILICONIX |
发明人 |
TERRILL, KYLE;BAI, YUMING;PATTANAYAK, DEVA N.;LUO, ZHIYUN |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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