| 摘要 |
<p>A FLOTOX EEPROM of the invention includes: a plurality of floating gates 11 arranged in array, each having a tunnel window 12 and allowing electron injection and extraction via the tunnel window; a plurality of select gates 13 provided in one-on-one correspondence to the plural floating gates 11; a control gate 16 shared by the plural floating gates 11; a source 17 shared by the plural floating gates 11; and a drain 18 shared by the plural floating gates 11. Therefore, the FLOTOX EEPROM does not encounter the decrease of junction breakdown voltage of a drain region, allowing the application of sufficiently high write voltage. Further, cell area can be reduced.</p> |
