| 摘要 |
<p>Provided is a method for manufacturing a nitride semiconductor device (100), including the steps of: forming an AlNO buffer layer (2) containing at least aluminum, nitrogen, and oxygen on a substrate (1); and forming a nitride semiconductor layer (3, 4, 5, 6, 7, 8) on the AlNO buffer layer (2), wherein, in the step of forming the AlNO buffer layer (2), the AlNO buffer layer (2) is formed by a reactive sputtering method using aluminum as a target (26) in an atmosphere to and from which nitrogen gas and oxygen gas are continuously introduced and exhausted, and the atmosphere is an atmosphere in which a ratio of a flow rate of the oxygen gas to a sum of a flow rate of the nitrogen gas and the flow rate of the oxygen gas is not more than 0.5%.</p> |
