发明名称 |
PROCESS FOR PRODUCTION OF PHOTORESIST PATTERN |
摘要 |
<p>Disclosed is a process for producing a photoresist pattern, comprising the steps of: preparing a photomask that comprises a metal nano structure having a metal film arranged thereon and can generate a plasmon resonance, on a mask substrate; preparing a photoresist film that is formed on the surface of the resist substrate and is sensible to light having a wavelength (X); bringing the photomask into contact with the photoresist film; and exposing the photoresist film to light having a wavelength (Y) that is longer than the wavelength (X) and is shorter than the peak wavelength of a plasmon resonance band of the metal nano structure, thereby transferring a pattern of the metal film in the photomask onto the photoresist film.</p> |
申请公布号 |
EP2544218(A1) |
申请公布日期 |
2013.01.09 |
申请号 |
EP20110750372 |
申请日期 |
2011.03.01 |
申请人 |
NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSITY |
发明人 |
UENO, KOSEI;MISAWA, HIROAKI |
分类号 |
G03F1/50;G03F7/20;H01L21/027;(IPC1-7):G03F1/08 |
主分类号 |
G03F1/50 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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