发明名称 PROCESS FOR PRODUCTION OF PHOTORESIST PATTERN
摘要 <p>Disclosed is a process for producing a photoresist pattern, comprising the steps of: preparing a photomask that comprises a metal nano structure having a metal film arranged thereon and can generate a plasmon resonance, on a mask substrate; preparing a photoresist film that is formed on the surface of the resist substrate and is sensible to light having a wavelength (X); bringing the photomask into contact with the photoresist film; and exposing the photoresist film to light having a wavelength (Y) that is longer than the wavelength (X) and is shorter than the peak wavelength of a plasmon resonance band of the metal nano structure, thereby transferring a pattern of the metal film in the photomask onto the photoresist film.</p>
申请公布号 EP2544218(A1) 申请公布日期 2013.01.09
申请号 EP20110750372 申请日期 2011.03.01
申请人 NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSITY 发明人 UENO, KOSEI;MISAWA, HIROAKI
分类号 G03F1/50;G03F7/20;H01L21/027;(IPC1-7):G03F1/08 主分类号 G03F1/50
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