| 摘要 |
A phase change memory device includes a phase change resistor and first and second electrodes. The first and second electrodes may be connected to opposite ends of the phase change resistor, respectively. In a programming operation, the resistance of the phase change resistor is changed to at least one of a plurality of stages by an electric signal applied in a direction from the first electrode to the second electrode and an electric signal applied in a direction from the second electrode to the first electrode. In a reading operation, the programmed resistance of the phase change resistor is read by applying an electric signal between the first electrode and the second electrode in an arbitrary direction. |
