| 摘要 |
A memory cell comprises a resistive switching element (142) connected in series with a junction-less field-effect-transistor (141). It is an advantage of a junction-less FET that it is easily scalable, hence allowing for smaller selectors to be used. Furthermore, the use of junction-less FETs as selectors provides advantages when using memory cells according to embodiments of the present invention in 3D stacked memory structures. |
