发明名称 Vapor-phase process apparatus, vapor-phase process method, and substrate
摘要 A vapor-phase process apparatus and a vapor-phase process method capable of satisfactorily maintaining quality of processes even when different types of processes are performed are obtained. A vapor-phase process apparatus includes a process chamber, gas supply ports serving as a plurality of gas introduction portions, and a gas supply portion (a gas supply member, a pipe, a flow rate control device, a pipe, and a buffer chamber). The process chamber allows flow of a reaction gas therein. The plurality of gas supply ports are formed in a wall surface (upper wall) of the process chamber along a direction of flow of the reaction gas. The gas supply portion can supply a gas into the process chamber at a different flow rate from each of one gas supply port and another gas supply port different from that one gas supply port among the plurality of gas supply ports.
申请公布号 US8349083(B2) 申请公布日期 2013.01.08
申请号 US201113270891 申请日期 2011.10.11
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD.;TAKASUKA EIRYO;UEDA TOSHIO;KURAMOTO TOSHIYUKI;UENO MASAKI 发明人 TAKASUKA EIRYO;UEDA TOSHIO;KURAMOTO TOSHIYUKI;UENO MASAKI
分类号 C23C16/00;C23C16/455;H01L21/302 主分类号 C23C16/00
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