发明名称 |
Vapor-phase process apparatus, vapor-phase process method, and substrate |
摘要 |
A vapor-phase process apparatus and a vapor-phase process method capable of satisfactorily maintaining quality of processes even when different types of processes are performed are obtained. A vapor-phase process apparatus includes a process chamber, gas supply ports serving as a plurality of gas introduction portions, and a gas supply portion (a gas supply member, a pipe, a flow rate control device, a pipe, and a buffer chamber). The process chamber allows flow of a reaction gas therein. The plurality of gas supply ports are formed in a wall surface (upper wall) of the process chamber along a direction of flow of the reaction gas. The gas supply portion can supply a gas into the process chamber at a different flow rate from each of one gas supply port and another gas supply port different from that one gas supply port among the plurality of gas supply ports.
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申请公布号 |
US8349083(B2) |
申请公布日期 |
2013.01.08 |
申请号 |
US201113270891 |
申请日期 |
2011.10.11 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD.;TAKASUKA EIRYO;UEDA TOSHIO;KURAMOTO TOSHIYUKI;UENO MASAKI |
发明人 |
TAKASUKA EIRYO;UEDA TOSHIO;KURAMOTO TOSHIYUKI;UENO MASAKI |
分类号 |
C23C16/00;C23C16/455;H01L21/302 |
主分类号 |
C23C16/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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