发明名称 |
Magnetic random access memory |
摘要 |
A magnetic random access memory according to the present invention is provided with: a magnetic recording layer including a magnetization free region having a reversible magnetization, wherein a write current is flown through the magnetic recording layer in an in-plane direction; a magnetization fixed layer having a fixed magnetization; a non-magnetic layer provided between the magnetization free region and the magnetization fixed layer; and a heat sink structure provided to be opposed to the magnetic recording layer and having a function of receiving and radiating heat generated in the magnetic recording layer. The magnetic random access memory thus-structured radiates heat generated in the magnetic recording layer by using the heat sink structure, suppressing the temperature increase caused by the write current flown in the in-plane direction.
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申请公布号 |
US8351249(B2) |
申请公布日期 |
2013.01.08 |
申请号 |
US20070297153 |
申请日期 |
2007.04.09 |
申请人 |
NEC CORPORATION;ISHIWATA NOBUYUKI;NUMATA HIDEAKI;OHSHIMA NORIKAZU |
发明人 |
ISHIWATA NOBUYUKI;NUMATA HIDEAKI;OHSHIMA NORIKAZU |
分类号 |
G11C11/15 |
主分类号 |
G11C11/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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