发明名称 |
Semiconductor device including high field regions and related method |
摘要 |
A semiconductor device is disclosed. In an embodiment, a semiconductor device includes a N-well within a P-well in a silicon layer, the silicon layer positioned atop a buried oxide layer of a silicon-on-insulator (SOI) substrate; a first source region and a second source region within a portion of the P-well; a first drain region and a second drain region within a portion of the P-well and within a portion of the N-well; and a gate positioned atop the N-well, wherein a lateral high field region is generated between the N-well and the P-well and a vertical high field region is generated between the gate and the N-well. A related method is disclosed.
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申请公布号 |
US8350338(B2) |
申请公布日期 |
2013.01.08 |
申请号 |
US201113023042 |
申请日期 |
2011.02.08 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATIONS;CLARK, JR. WILLIAM F.;SHI YUN |
发明人 |
CLARK, JR. WILLIAM F.;SHI YUN |
分类号 |
H01L0023/000013 |
主分类号 |
H01L0023/000013 |
代理机构 |
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地址 |
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