发明名称 |
Sheet structure, semiconductor device and method of growing carbon structure |
摘要 |
The sheet structure includes a plurality of linear structure bundles including a plurality of linear structures of carbon atoms arranged at a first gap, and arranged at a second gap larger than the first gap, a graphite layer formed in a region between the plurality of linear structure bundles and connected to the plurality of linear structure bundles, and a filling layer filled in the first gap and the second gap and retaining the plurality of linear structure bundles and the graphite layer.
|
申请公布号 |
US8350391(B2) |
申请公布日期 |
2013.01.08 |
申请号 |
US201213562782 |
申请日期 |
2012.07.31 |
申请人 |
FUJITSU LIMITED;KONDO DAIYU;IWAI TAISUKE;YAMAGUCHI YOSHITAKA;SOGA IKUO |
发明人 |
KONDO DAIYU;IWAI TAISUKE;YAMAGUCHI YOSHITAKA;SOGA IKUO |
分类号 |
H01L21/44;H01L29/40 |
主分类号 |
H01L21/44 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|