发明名称 |
Semiconductor device and method for manufacturing same |
摘要 |
A semiconductor device according to an embodiment includes: a semiconductor substrate; a resistance element of a first conductivity type formed in one region of the semiconductor substrate; a field effect transistor of a second conductivity type formed in another region of the semiconductor substrate; and a field effect transistor of the first conductivity type formed in still another region of the semiconductor substrate. The resistance element includes: an insulating film formed in an upper layer portion of the semiconductor substrate; and a well of the first conductivity type formed immediately below the insulating film, an impurity concentration at an arbitrary depth position in the well of the first conductivity is lower than an impurity concentration at the same depth position in a channel region of the field effect transistor of the second conductivity type.
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申请公布号 |
US8350333(B2) |
申请公布日期 |
2013.01.08 |
申请号 |
US20100785843 |
申请日期 |
2010.05.24 |
申请人 |
KABUSHIKI KAISHA TOSHIBA;ISHIHARA HANAE;NOGUCHI MITSUHIRO |
发明人 |
ISHIHARA HANAE;NOGUCHI MITSUHIRO |
分类号 |
H01L45/00;H01L21/8239;H01L27/105 |
主分类号 |
H01L45/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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