发明名称 |
Integrated circuit with stress inserts |
摘要 |
An integrated circuit (IC) fabricated on a semiconductor substrate has an active gate structure formed over a channel region in the semiconductor substrate. A dummy gate structure is formed on a dielectric isolation structure. The dummy gate structure and the active gate structure have the same width. A sidewall spacer on the dummy gate structure overlies a semiconductor portion between a strain-inducing insert and the dielectric isolation structure.
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申请公布号 |
US8350253(B1) |
申请公布日期 |
2013.01.08 |
申请号 |
US20100697027 |
申请日期 |
2010.01.29 |
申请人 |
XILINX, INC.;ZHU BEI;PAN HONG-TZE;NGUYEN BANG-THU;LIN QI;WU ZHIYUAN;YEH PING-CHIN;AHN JAE-GYUNG;WU YUN |
发明人 |
ZHU BEI;PAN HONG-TZE;NGUYEN BANG-THU;LIN QI;WU ZHIYUAN;YEH PING-CHIN;AHN JAE-GYUNG;WU YUN |
分类号 |
H01L29/06 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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