发明名称 Semiconductor device manufacturing method, wafer treatment system, and recording medium
摘要 A semiconductor device manufacturing method includes loading plural dry-etched wafers one by one in a container having a side door so as to be disposed substantially horizontally and in layers vertically therein; and blowing out a purge gas horizontally to those wafers loaded in the container for 30 sec or more after all the subject wafers are loaded in the container while the side door is open.
申请公布号 US8349087(B2) 申请公布日期 2013.01.08
申请号 US20100654987 申请日期 2010.01.12
申请人 RENESAS ELECTRONICS CORPORATION;NAMBU HIDETAKA;HIRONAGA NOBUO;OTA FUTOSHI;YOKOYAMA TORU;SUGAWARA OSAMU;SATOU RYO;TAMURA MASATO 发明人 NAMBU HIDETAKA;HIRONAGA NOBUO;OTA FUTOSHI;YOKOYAMA TORU;SUGAWARA OSAMU;SATOU RYO;TAMURA MASATO
分类号 B08B3/12;B08B6/00;B08B7/00;B08B7/02;C25F1/00;C25F3/30;C25F5/00 主分类号 B08B3/12
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