发明名称 |
Structure of power grid for semiconductor devices and method of making the same |
摘要 |
An embodiment of the invention provides a semiconductor structure, which may include a stud of a first conductive material formed inside a dielectric layer; a via of a second conductive material having a bottom and sidewalls with the bottom and the sidewalls being covered by a conductive liner, and the bottom being formed directly on top of the stud and being in contact with the via through the conductive liner; and one or more conductive paths of a third conductive material connecting to the via through the conductive liner at the sidewalls of said the. A method of making the semiconductor structure is also provided.
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申请公布号 |
US8349723(B2) |
申请公布日期 |
2013.01.08 |
申请号 |
US201213342221 |
申请日期 |
2012.01.03 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;FILIPPI RONALD;LI WAI-KIN;WANG PING-CHUAN |
发明人 |
FILIPPI RONALD;LI WAI-KIN;WANG PING-CHUAN |
分类号 |
H01L21/4763 |
主分类号 |
H01L21/4763 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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