| 摘要 |
Provided are a laser irradiation apparatus, an irradiation method using the same, and a method of crystallizing an amorphous silicon film using the same. Particularly, a laser irradiation apparatus which can reduce a deviation of an intensity of a laser beam, an irradiation method using the same, and a method of crystallizing an amorphous silicon film using the same, which can improve uniformity in crystallization into a polycrystalline silicon thin film, are provided.
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