发明名称 Flash memory device and program method thereof
摘要 A nonvolatile memory device that includes first and second storage areas, and a control logic configured to control the first and second storage areas, wherein when a program operation of the first storage area is passed before a program operation of the second storage area is passed, the control logic completes the program operation of the first storage area and continues the program operation of the second storage area is provided.
申请公布号 US8351262(B2) 申请公布日期 2013.01.08
申请号 US20090482590 申请日期 2009.06.11
申请人 SAMSUNG ELECTRONICS CO., LTD.;PARK JIN-SUNG 发明人 PARK JIN-SUNG
分类号 G11C11/34 主分类号 G11C11/34
代理机构 代理人
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