发明名称 Radiation image detection apparatus and manufacturing method of radiation image detector with substrate side charge transport layer
摘要 In a radiation image detection apparatus having a radiation image detector that includes the following stacked in the order listed below: a bias electrode, a photoconductive layer, a substrate side charge transport layer, and an active matrix substrate, the radiation image detector does not include an area adjacent to the interface between the substrate side charge transport layer and photoconductive layer having an oxygen or chlorine element density not less than two times the average density of oxygen or chlorine element in the substrate side charge transport layer.
申请公布号 US8350207(B2) 申请公布日期 2013.01.08
申请号 US201113228748 申请日期 2011.09.09
申请人 FUJIFILM CORPORATION;NARIYUKI FUMITO;KATO MUNETAKA;SATO KEIICHIRO 发明人 NARIYUKI FUMITO;KATO MUNETAKA;SATO KEIICHIRO
分类号 H01J40/14 主分类号 H01J40/14
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