发明名称 Stress detection within an integrated circuit having through silicon vias
摘要 An integrated circuit 2 is formed of multiple wafer layers 4, 6, 8, 10 arranged in a stack and connected with through silicon vias 12. Mechanical strain sensors 26, 28, 30, 32 in the form of ring oscillators are provided proximal to the through silicon vias 12 and detect mechanical strain associated with the through silicon via 12. The measured mechanical strain may be used to dynamically adjust operating parameters of the integrated circuit either as a whole or in regions where the mechanical strain is detected. The operating parameters adjusted can include clock frequency, operating voltage and heat generation.
申请公布号 US8347728(B2) 申请公布日期 2013.01.08
申请号 US20100805025 申请日期 2010.07.07
申请人 ARM LIMITED;AITKEN ROBERT CAMPBELL 发明人 AITKEN ROBERT CAMPBELL
分类号 G01B7/16 主分类号 G01B7/16
代理机构 代理人
主权项
地址