发明名称 Soft program of a non-volatile memory block
摘要 A method includes erasing bits and identifying bits that have been over-erased by the erasing. A first subset of the bits that have been over-erased are soft programmed. The results of soft programming the first subset of bits is measured. An initial voltage condition from a plurality of possible voltage conditions based on the results from soft programming the first subset of bits is selected. A second subset of bits that have been over-erased are soft programmed. The soft programming applies the initial voltage condition to the bits in the second subset of bits. The second subset comprises bits that are still over-erased when the step of selecting occurs. The result is that the soft programming for the second subset may begin at a more optimum point for quickly achieving the needed soft programming to bring all of the bits within the desired erase condition.
申请公布号 US8351276(B2) 申请公布日期 2013.01.08
申请号 US20100835309 申请日期 2010.07.13
申请人 FREESCALE SEMICONDUCTOR, INC.;CHOY JON S.;HE CHEN;SADD MICHAEL A. 发明人 CHOY JON S.;HE CHEN;SADD MICHAEL A.
分类号 G11C11/34 主分类号 G11C11/34
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