发明名称 |
Soft program of a non-volatile memory block |
摘要 |
A method includes erasing bits and identifying bits that have been over-erased by the erasing. A first subset of the bits that have been over-erased are soft programmed. The results of soft programming the first subset of bits is measured. An initial voltage condition from a plurality of possible voltage conditions based on the results from soft programming the first subset of bits is selected. A second subset of bits that have been over-erased are soft programmed. The soft programming applies the initial voltage condition to the bits in the second subset of bits. The second subset comprises bits that are still over-erased when the step of selecting occurs. The result is that the soft programming for the second subset may begin at a more optimum point for quickly achieving the needed soft programming to bring all of the bits within the desired erase condition.
|
申请公布号 |
US8351276(B2) |
申请公布日期 |
2013.01.08 |
申请号 |
US20100835309 |
申请日期 |
2010.07.13 |
申请人 |
FREESCALE SEMICONDUCTOR, INC.;CHOY JON S.;HE CHEN;SADD MICHAEL A. |
发明人 |
CHOY JON S.;HE CHEN;SADD MICHAEL A. |
分类号 |
G11C11/34 |
主分类号 |
G11C11/34 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|