发明名称 Structure of porous low-k layer and interconnect structure
摘要 A structure of a porous low-k layer is described, comprising a bottom portion and a body portion of the same atomic composition, wherein the body portion is located on the bottom portion, and the bottom portion has a density higher than the density of the body portion. An interconnect structure is also described, including the above porous low-k layer, and a conductive layer filling up a damascene opening in the porous low-k layer.
申请公布号 US8350246(B2) 申请公布日期 2013.01.08
申请号 US201113038612 申请日期 2011.03.02
申请人 UNITED MICROELECTRONICS CORP.;CHEN MEI-LING;LAI KUO-CHIH;SUNG SU-JEN;HUANG CHIEN-CHUNG;LAI YU-TSUNG 发明人 CHEN MEI-LING;LAI KUO-CHIH;SUNG SU-JEN;HUANG CHIEN-CHUNG;LAI YU-TSUNG
分类号 H01L33/16;H01L21/443 主分类号 H01L33/16
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