发明名称 |
Field effect transistor and method of manufacturing the same |
摘要 |
A p-type nitride compound semiconductor layer is formed on a buffer formed on a substrate. An n-type contact region is formed by ion implantation under a source electrode and a drain electrode. An electric-field reducing layer made of an n-type nitride compound semiconductor is formed on the p-type nitride compound semiconductor layer. A carrier density of the electric-field reducing layer is lower than that of the n-type contact region. A first end portion of the electric-field reducing layer contacts with the n-type contact region, and a second end portion of the electric-field reducing layer overlaps with a gate electrode.
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申请公布号 |
US8350293(B2) |
申请公布日期 |
2013.01.08 |
申请号 |
US20090648564 |
申请日期 |
2009.12.29 |
申请人 |
FURUKAWA ELECTRIC CO., LTD.;CHOW TAT-SING PAUL;NOMURA TAKEHIKO;NIIYAMA YUKI;KAMBAYASHI HIROSHI;YOSHIDA SEIKOH |
发明人 |
CHOW TAT-SING PAUL;NOMURA TAKEHIKO;NIIYAMA YUKI;KAMBAYASHI HIROSHI;YOSHIDA SEIKOH |
分类号 |
H01L29/08 |
主分类号 |
H01L29/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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