发明名称 |
Semiconductor device structure with strain layer |
摘要 |
A semiconductor device with a strain layer and a method of fabricating the semiconductor device with a strain layer that can reduce a loading effect are provided. By arranging active dummies and gate dummies not to overlap each other, the area of active dummy on which a strain layer dummy will be formed can be secured, thereby reducing the loading effect.
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申请公布号 |
US8350354(B2) |
申请公布日期 |
2013.01.08 |
申请号 |
US20100951808 |
申请日期 |
2010.11.22 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;LEE SEUNG-HWAN;SHIN HEON-JONG;MAEDA SHIGENOBU;WI SUNG-REY;QUAN WANGXIAO;CHOI HYUN-MIN |
发明人 |
LEE SEUNG-HWAN;SHIN HEON-JONG;MAEDA SHIGENOBU;WI SUNG-REY;QUAN WANGXIAO;CHOI HYUN-MIN |
分类号 |
H01L21/70;H01L21/762 |
主分类号 |
H01L21/70 |
代理机构 |
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代理人 |
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地址 |
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