发明名称 |
Semiconductor memory device with power decoupling capacitors and method of fabrication |
摘要 |
Provided is a semiconductor memory device including a capacitor structure extending over core and peripheral areas of a substrate. Respective portions of the capacitor structure function as memory cell capacitors in the core area and as first and second capacitors in the peripheral area. A combination of the first and second capacitors functions as a first power decoupling capacitor, and a transistor disposed in the peripheral area functions as a second power decoupling capacitor.
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申请公布号 |
US8350307(B2) |
申请公布日期 |
2013.01.08 |
申请号 |
US20090539824 |
申请日期 |
2009.08.12 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD.;KIM SUNGHOON |
发明人 |
KIM SUNGHOON |
分类号 |
H01L29/94;H01L21/8242 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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