发明名称 |
Variable resistance device, method for manufacturing variable resistance device, and semiconductor storage device using variable resistance device |
摘要 |
A variable resistance device includes a first electrode including a transition metal nitride film, a second electrode including a precious metal or a precious metal oxide, and a transition metal oxide film interposed between the first and second electrodes.
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申请公布号 |
US8350244(B2) |
申请公布日期 |
2013.01.08 |
申请号 |
US20100785763 |
申请日期 |
2010.05.24 |
申请人 |
FUJITSU LIMITED;NOSHIRO HIDEYUKI |
发明人 |
NOSHIRO HIDEYUKI |
分类号 |
H01L29/02 |
主分类号 |
H01L29/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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