发明名称 Conformal etch material and process
摘要 The present disclosure provides a method for etching a substrate. The method includes forming a resist pattern on the substrate; applying an etching chemical fluid to the substrate, wherein the etching chemical fluid includes a diffusion control material; removing the etching chemical fluid; and removing the resist pattern.
申请公布号 US8349739(B2) 申请公布日期 2013.01.08
申请号 US20090546812 申请日期 2009.08.25
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.;CHANG CHING-YU 发明人 CHANG CHING-YU
分类号 H01L21/302 主分类号 H01L21/302
代理机构 代理人
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