发明名称 |
NONVOLATILE SEMICONDUCTOR MEMORY DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To accurately perform reading operation. <P>SOLUTION: When performing reading operation of memory transistors, a controlling circuit applies a first voltage to a selected word line connected to a selected memory transistor. The controlling circuit applies second voltages that bring the memory transistors into conduction regardless of data held by the memory transistors to non-selected word lines connected to non-selected memory transistors excluding the selected memory transistor. The controlling circuit applies third voltages to bit lines. The controlling circuit applies a fourth voltage smaller than the third voltages to a selected source line connected to a memory string in which the selected memory transistor in a selected memory block is included out of source lines. The controlling circuit applies fifth voltages that are substantially the same as the third voltages to non-selected source lines to which non-selected memory strings are connected in the selected memory block out of the source lines. <P>COPYRIGHT: (C)2013,JPO&INPIT |
申请公布号 |
JP2013004123(A) |
申请公布日期 |
2013.01.07 |
申请号 |
JP20110131776 |
申请日期 |
2011.06.14 |
申请人 |
TOSHIBA CORP |
发明人 |
MAEJIMA HIROSHI;SAKAGUCHI NATSUKI |
分类号 |
G11C16/02;G11C16/04;G11C16/06 |
主分类号 |
G11C16/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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