发明名称 CHARGED PARTICLE BEAM DRAWING METHOD, EVALUATION METHOD OF CHARGED PARTICLE BEAM DRAWING APPARATUS, AND CHARGED PARTICLE BEAM DRAWING APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a charged particle beam drawing method for evaluating an amount of drift at a deflection position of a charged particle beam in a short time. <P>SOLUTION: This charged particle bean drawing method has: a reference position information acquisition process for acquiring reference position information on each of reference marks by irradiating a plurality of the reference marks fixed on a stage with a charged particle beam; a first drawing process for drawing a pattern on a sample by irradiating the sample placed on the stage with the charged particle beam; an evaluation position information acquisition process for acquiring evaluation position information on each of the reference marks by deflecting the charged particle beam with the stage being at a standstill and thereby irradiating the reference marks with the charged particle beam one by one; a comparison process for comparing the evaluation position information with the reference position information; a drift calculation process for calculating the amount of drift at a beam position with the charged particle beam deflected from the result of the comparison process; and a second drawing process for drawing the pattern on the sample by irradiating the sample with the charged particle beam. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013004888(A) 申请公布日期 2013.01.07
申请号 JP20110136981 申请日期 2011.06.21
申请人 NUFLARE TECHNOLOGY INC 发明人 SHINKAWA TOSHITSUGU
分类号 H01L21/027;H01J37/147;H01J37/305 主分类号 H01L21/027
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