SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device which suppresses electric resistance of a gate electrode, and to provide a manufacturing method of the silicon carbide semiconductor device.

SOLUTION: A gate electrode 50 includes: a polysilicon film 51 contacting with a gate insulation film 41; a barrier film 52 provided on the polysilicon film 51; and a metal film 53 provided on the barrier film 52 and made of a high melting point metal. An interlayer dielectric film 42 is disposed so as to cover the gate insulation film 41 and the gate electrode 50 provided on the gate insulation film 41. Further, the interlayer dielectric film 42 has a substrate contact hole SH partially exposing a silicon carbide substrate 30 in a region contacting with the gate insulation film 41. Wiring 71 electrically connects with the silicon carbide substrate 30 through the substrate contact hole SH and is electrically insulated from the gate electrode 50 by the interlayer dielectric film 42.

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