| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the difficulty in burying an insulation film in a gap between lines of wiring or a gap between the underside of wiring and the top face of a substrate. <P>SOLUTION: The manufacturing method of a semiconductor device 100 includes the steps of: forming an insulation layer (insulation layer 106) on a substrate; selectively removing part of the insulation layer 106 to form concavities (wiring groove 107 and wiring groove 110) and burying a barrier metal film 112 and a metal film 114 in the concavities in that order to form lines of wiring (wiring 115a, 115b); removing the insulation layer 106 while leaving the lines of wiring (wiring 115a, 115b) intact; and forming an interlayer insulation film 118 to bury the periphery of the lines of wiring (wiring 115a, 115b) by using a solution described below after removing the insulation layer 106 in the above step. The solution is specified by including a silane compound, a porogen which comprises a surfactant, and a theta solvent (excluding alcohol and water) which, compared to alcohol, easily precipitates the silane compound on its surface according to the solute concentration of the silane compound and is unlikely to thicken. <P>COPYRIGHT: (C)2013,JPO&INPIT |
