| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device and a semiconductor device manufacturing method which avoids damages on a semiconductor element below an electrode pad at the time of bonding by a Cu wire. <P>SOLUTION: A semiconductor device which can be electrically connected by a bonding wire consisting primarily of copper, comprises: a semiconductor element 10; an electrode pad 20 arranged on the semiconductor element 10 and composed of a metal harder than aluminum; and a metal layer 30 arranged on the electrode pad 20 and composed of an aluminum film to which the bonding wire is connected. <P>COPYRIGHT: (C)2013,JPO&INPIT |
