| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, which can prevent mask collapse and further prevent side etching of AlCu wiring. <P>SOLUTION: A semiconductor device manufacturing method comprises: forming an AlCu wiring layer 34 by sequentially laminating an under side TiN/Ti film 29, an AlCu film 30 and an upper side TiN/Ti film 31 on a second interlayer film 17 of SiC; subsequently, forming a hard mask 37 of SiO<SB POS="POST">2</SB>on the AlCu wiring layer 34; forming, by dry etching the AlCu wiring layer 34 by using the hard mask 37, first AlCu wiring 20; forming a sunken part 28 by etching the second interlayer film 17 after forming the first AlCu wiring 20; and concurrently causing C to dissociate from the second interlayer film 17 (SiC) and fixing a reaction product containing the dissociating C onto a side wall protection film 32 to thicken the side wall protection film 32. <P>COPYRIGHT: (C)2013,JPO&INPIT |
