| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a solar cell including a CIGS light absorption layer. <P>SOLUTION: An In layer is formed on the surface of a lower electrode, a Cu-Ga layer containing an alkaline metal (Na) is formed on the In layer, and a layer consisting of at least one kind of Cu, In, Ga and not containing an alkaline metal is formed on the Cu-Ga layer containing an alkaline metal. A precursor consisting of the In layer formed on the surface of a lower electrode, the Cu-Ga layer containing Na and an In layer thereon is rendered selenide to produce a CIGS light absorption layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
