RESIST COMPOSITION, AND RESIST PATTERN FORMING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a resist composition and a resist pattern forming method in which dimensional changes due to the effect of time passage are suppressed and lithography properties and resist pattern shapes are excellent.

SOLUTION: A resist composition contains a compound (G) having a monovalent group represented by the general formula (g1) or (g2), and a compound (H) having a monovalent group represented by the general formula (h1) or (h2).

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