| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element having two layers of light-emitting layers which have the same emission peak wavelength, which can obtain a high maximum current value and a high radiant power output by a low forward voltage. <P>SOLUTION: A semiconductor light-emitting element of the present invention comprises: a support substrate 102 on which an intermediate electrode 104, a lower first conductivity type semiconductor layer 106, a first light-emitting layer 108, a second conductivity type semiconductor layer 110, a second light-emitting layer 112 having an emission wavelength the same as that of the first light-emitting layer 108, an upper first conductivity type semiconductor layer 114 and an upper electrode 116 are sequentially provided on a top face side; a lower electrode 118 provided on an undersurface side of the support substrate 102; and a reference electrode 122 provided in a recess 120 penetrating the upper first conductivity type semiconductor layer 114 and the second light-emitting layer 112 and electrically connected to the second conductivity type semiconductor layer 110. A part of an effective region in which a current of the first light-emitting layer 108 flows is restricted. <P>COPYRIGHT: (C)2013,JPO&INPIT |
