| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a flip chip semiconductor light emitting element which inhibits increase in forward voltage and improves light extraction efficiency. <P>SOLUTION: A semiconductor light-emitting element comprises: a laminated semiconductor layer in which a first semiconductor layer having a first conductivity type, a light-emitting layer and a second semiconductor layer 160 having a second conductivity type are laminated; a first electrode connected to the first semiconductor layer; and a second electrode 170 provided on a surface of the second semiconductor layer. The second electrode includes: a plurality of thick film parts each having a film thickness larger than other parts; a transparent conductive layer 171 having light permeability; a multilayered insulation layer 172 in which first insulation layers laminated on the transparent conductive layer and each having a first refraction factor and having light permeability, and a second insulation layers having a second refraction factor higher than the first refraction factor and having light permeability are alternately laminated one on top of another; a metal reflective layer 173a laminated on the multilayered insulation layer and having conductivity; and a conductor part 176 provided through the multilayered insulation layer and in which one end is electrically connected to the thick film part of the transparent conductive layer and the other end is electrically connected to the metal reflective layer. <P>COPYRIGHT: (C)2013,JPO&INPIT |
