| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a thin film transistor having high electron field-effect mobility. <P>SOLUTION: A thin film transistor comprises a channel layer formed by depositing an oxide semiconductor material under an atmosphere of a mixed gas containing an inert gas and water molecules. The oxide semiconductor material is an oxide containing In atoms and Zn atoms and an atomic ratio Zn/(In+Zn) is not less than 10 atom% and below 20 atom%. <P>COPYRIGHT: (C)2013,JPO&INPIT |
