| 摘要 |
<P>PROBLEM TO BE SOLVED: To easily manufacture a semiconductor device having high ON-state characteristics and high OFF-state characteristics without undermining layout freedom. <P>SOLUTION: A semiconductor device manufacturing method comprises: forming a source electrode 2 and a drain electrode 3 on a surface of a semiconductor substrate 1 transparent with respect to visible light; forming a front side gate electrode 4 on the surface of the semiconductor substrate 1 between the source electrode 2 and the drain electrode 3; forming an alignment mark 5 in a region of the surface of the semiconductor substrate 1 other than between the source electrode 2 and the drain electrode 3; and aligning the semiconductor substrate 1 based on the alignment mark 5 seen through the semiconductor substrate 1 to form a reverse side gate electrode 6 at a location on a rear face of the semiconductor substrate 1 opposite to the front side gate electrode 4. <P>COPYRIGHT: (C)2013,JPO&INPIT |
