| 摘要 |
<P>PROBLEM TO BE SOLVED: To make it possible to avoid variation in electrical characteristics and lowering of reliability of a semiconductor storage device having a logic part in a storage part. <P>SOLUTION: A semiconductor storage device manufacturing method comprises: removing, after performing a process of forming a storage part gate insulation film 102 and a first conductive film 141 on a substrate 101 having a storage part 300 and a logic part 301, a part formed on the logic part 301 in the first conductive film 141 and the storage part gate insulation film 102; exposing, after performing a process of forming a logic part gate insulation film 111 and a second conductive film 147, the first conductive film 141 on the storage part 300. <P>COPYRIGHT: (C)2013,JPO&INPIT |
