| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus in which the time required for purge can be shortened, in an ALD method of nitriding or oxidizing a layer on a processed substrate, for example, by plasma processing. <P>SOLUTION: A head 16 supplies a first process gas toward a stage 14 in a first region within a first space S1. The head 16 can retract to a second region R2. The head 16 can define an upper region Ra above the first region within the first space S1, and a lower region Rb below the first region. A supply source 18 supplies an electromagnetic field energy to the upper region Ra. A second process gas is supplied to the upper region Ra. The head 16 has a size large enough to cover the stage 14 and the opening of an interconnection path P facing the lower region Rb. <P>COPYRIGHT: (C)2013,JPO&INPIT |
