| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device and a manufacturing method of the semiconductor storage device, which inhibit variation in impurity density of a well diffusion layer caused by formation of STI (Shallow Trench Isolation) and inhibits a dose loss of the well diffusion layer. <P>SOLUTION: A semiconductor storage device comprises: a semiconductor substrate; a plurality of memory cells formed on the semiconductor substrate in a memory cell region; a plurality of semiconductor elements controlling the plurality of memory cells and formed in a peripheral circuit region; and an element isolation region isolating the plurality of memory cells from each other or isolating the plurality of semiconductor elements from each other. An impurity density of an active area where the semiconductor elements are formed in the peripheral circuit region lowers, in a horizontal direction with respect to a surface of the semiconductor substrate, from a lateral face of the element isolation region toward an inner portion of the active area. <P>COPYRIGHT: (C)2013,JPO&INPIT |
