| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a switching circuit that implements a reduced gate current and a high speed operation. <P>SOLUTION: The switching circuit includes: a switching element T<SB POS="POST">SW</SB>having first and second main electrodes arranged apart from each other on a main surface of a nitride semiconductor layer, and a control electrode arranged on the main surface between the first main electrode and the second main electrode; and a drive circuit 10 including a first driving element T<SB POS="POST">D1</SB>having a collector terminal, an emitter terminal, and a control terminal, and an input terminal. The collector terminal of the first driving element is connected to the first main electrode of the switching element, the emitter terminal of the first driving element is connected to the control electrode of the switching element, and the control terminal of the first driving element is connected to the input terminal and the emitter terminal. <P>COPYRIGHT: (C)2013,JPO&INPIT |
