| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor substrate and a manufacturing method therefor in which the upper and lower silicon surfaces in a cavity do not adhere to each other during the manufacturing process of a device such as a pressure sensor, and to provide a semiconductor device having a highly accurate small diaphragm. <P>SOLUTION: In a silicon substrate 1 having a diaphragm 100 of SON structure 101 and a manufacturing method therefor, convex islands 4 are formed on a lower silicon surface 3 in a cavity 2 constituting the SON structure 101. Hole groups having different depth are formed on the surface of the semiconductor substrate, and subjected to high temperature annealing thus forming one large cavity. <P>COPYRIGHT: (C)2013,JPO&INPIT |
