| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can successfully perform an HPM treatment or an APM treatment performed after a DHF treatment. <P>SOLUTION: A semiconductor device manufacturing method comprises: a process of performing, in a tank, a dilute hydrofluoric acid treatment on a wafer including a silicon substrate; a process of introducing water into the tank to discharge dilute hydrofluoric acid from the tank; and a process of introducing, after the dilute hydrofluoric acid has been discharged from the tank, H<SB POS="POST">2</SB>O<SB POS="POST">2</SB>and hot water of a temperature higher than that of the water into the tank such that introduction time of the hot water is made to be the same as introduction time of H<SB POS="POST">2</SB>O<SB POS="POST">2</SB>or after the introduction time of H<SB POS="POST">2</SB>O<SB POS="POST">2</SB>. <P>COPYRIGHT: (C)2013,JPO&INPIT |
