| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory element having a three-dimensional double cross point array in which the integration degree is enhance and the electrical characteristics are improved by a simple system, and to provide a manufacturing method therefor. <P>SOLUTION: The semiconductor memory element includes first, second and third conductors arranged at levels different from each other and defining two cross points, and two memory cells arranged at two cross points, respectively. The first and second conductors are extended in parallel with each other, the third conductor is extended to intersect the first and second conductors, the first and second conductors are arranged alternately along the length of the third conductor when viewed on a vertical cross section, and the third conductor is separated vertically from the first and second conductors. <P>COPYRIGHT: (C)2013,JPO&INPIT |
