发明名称 SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To prevent increase in a circuit scale. <P>SOLUTION: A semiconductor device comprises: a fuse section that includes a plurality of fuses connected in series in descending order of resistance values thereof; a plurality of selection switches each of which is connected between one end of each of the plurality of fuses in the fuse section and a first power supply voltage; a fuse melting voltage output circuit that outputs a fuse cutting voltage having a predetermined potential difference from the first power supply voltage to a side of a fuse having the lowest resistance value among the fuses in the fuse section; and a control circuit that brings the switches in a conductive state sequentially in order from one connected to a fuse having the highest resistance value to one connected to a fuse having the lowest resistance value among the fuses in the fuse section with the fuse melting voltage output circuit outputting the fuse cutting voltage when cutting the fuses. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP2013004602(A) 申请公布日期 2013.01.07
申请号 JP20110132117 申请日期 2011.06.14
申请人 RENESAS ELECTRONICS CORP 发明人 NAKAMURA HITOSHI
分类号 H01L21/822;H01L21/82;H01L27/04 主分类号 H01L21/822
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